IRFB812PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFB812PbF
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100μsec
1msec
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
0.01
1
10
100
1000
Fig 12. Ma^Vx^Di^Sm^, u^Dm^raiS^n-a^tof^Se^oO^urp^ceer^Va^ot^li^tn^agg^eA^(Vre⁾ a
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 13a. Unclamped Inductive Test Circuit
L
VCC
DUT
0
1K
S
700
ID
600
TOP
0.4A
0.7A
BOTTOM 1.8A
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
tp
I_AS
Fig 13b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Fig 14a. Gate Charge Test Circuit
6
Qgs1 Qgs2 Qgd
Qgodr
Fig 14b. Gate Charge Waveform
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