IRFB812PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET

Applications
• Zero Voltage Switching SMPS
• Uninterruptible Power Supplies
• Motor Control applications
PD -97693
IRFB812PbF
HEXFET^® Power MOSFET
V_DSS R_DS(on) typ. ^{Trr typ.} I_D
500V 1.75Ω
75ns 3.6A
Features and Benefits
• Fast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise
immunity.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
3.6
2.3
14.4
78
0.63
± 20
32
-55 to + 150
300 (1.6mm from case )
x x 10lb in (1.1N m)
A
W
W/°C
V
V/ns
°C
Symbol
I_S
I_SM
V_SD
t_rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
Ù (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units Conditions
––– ––– 3.6
MOSFET symbol
D
A showing the
––– ––– 14.4
integral reverse
G
––– ––– 1.2
p-n junction diode.
S
f V T_J = 25°C, I_S = 3.6A, V_GS = 0V
––– 75 110
––– 94 140
––– 135 200
––– 220 330
ns T_J = 25°C, I_F = 3.6A
f T_J = 125°C, di/dt = 100A/μs
f nC T_J = 25°C, I_S = 3.6A, V_GS = 0V
f T_J = 125°C, di/dt = 100A/μs
––– 3.2 4.8 A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes  through † are on page 2
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6/23/11