IRFB812PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFB812PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
650
Id = 250uA
600
100
Coss
550
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
500
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 6. Typ. Breadown Voltage
vs. Temperature
16
ID= 3.6A
VDS= 400V
12
VDS= 250V
VDS= 100V
8
4
0
0
4
8
12
16
QG Total Gate Charge (nC)
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
4
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