IRFB4233PBF Datasheet, PDF (6/8 Pages) International Rectifier – Energy Recovery & Pass switch applications in Plasma Display Panels

IRFB4233PbF
+
‚
-

R_G
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-^„ +
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
• di/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
* V_GS=10V
V_DD
I_SD
* V_GS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET^® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 19a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 19b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Fig 20a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6
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