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IRFB4233PBF Datasheet, PDF (1/8 Pages) International Rectifier – Energy Recovery & Pass switch applications in Plasma Display Panels
PD - 97004
PDP SWITCH
IRFB4233PbF
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE rating to reduce power dissipation
in PDP Sustain, Energy Recovery and Pass
Switch Applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
230
V
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
276
V
31
m:
IRP max @ TC= 100°C
114
A
TJ max
175
°C
D
G
S
TO-220AB
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case f
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
Notes  through † are on page 8
www.irf.com
Max.
±30
56
39
220
114
370
190
2.5
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
6/8/05