IRFB4233PBF Datasheet, PDF (5/8 Pages) International Rectifier – Energy Recovery & Pass switch applications in Plasma Display Panels

0.16
ID = 39A
0.12
0.08
TJ = 125°C
0.04
0.00
4
TJ = 25°C
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
5.5
5.0
4.5
ID = 250µA
4.0
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFB4233PbF
1200
1000
800
ID
TOP
13A
18A
BOTTOM 39A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
180
ton= 1µs
160
Duty cycle = 0.25
Half Sine Wave
140
Square Pulse
120
100
80
60
40
20
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci τi/Ri
R_2R2
τ_{2 τ2}
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.05443 0.000069}
τ_{3 τ3}
0.12807 0.001767
0.21933 0.02082
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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