IRFB4115PBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4115PbF
6.0
5.0
4.0
ID = 250µA
3.0 ID = 1.0mA
ID = 1.0A
2.0
50
IF = 42A
VR = 130V
40 _{TJ = 25°C}
TJ = 125°C
30
20
10
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
50
IF = 62A
VR = 130V
40 _{TJ = 25°C}
TJ = 125°C
30
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
2500
2000
1500
IF = 42A
VR = 130V
TJ = 25°C
TJ = 125°C
20
1000
10
500
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
3000
2400
1800
IF = 62A
VR = 130V
TJ = 25°C
TJ = 125°C
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
1200
600
0
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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