IRFB4115PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4115PbF
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.18 ––– V/°C Reference to 25°C, ID = 3.5mA^c
––– 9.3 11 mΩ VGS = 10V, ID = 62A ^f
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 150V, VGS = 0V
––– ––– 250
V_DS = 150V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA ^VGS ^{= 20V}
––– ––– -100
V_GS = -20V
R_G
Internal Gate Resistance
––– 2.3 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
97 ––– ––– S VDS = 50V, ID = 62A
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 77 120
––– 28 –––
––– 26 –––
––– 51 –––
––– 18 –––
––– 73 –––
––– 41 –––
––– 39 –––
––– 5270 –––
––– 490 –––
nC ID = 62A
V_DS = 75V
V_GS = 10V f
I_D = 62A, V_DS =0V, V_GS = 10V
ns ^VDD ^{= 98V}
I_D = 62A
R_G = 2.2Ω
V_GS = 10V f
pF VGS = 0V
V_DS = 50V
C_rss
Reverse Transfer Capacitance
––– 105 –––
C_oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 460 –––
C_oss eff. (TR) Effective Output Capacitance (Time Related) ––– 530 –––
ƒ = 1.0 MHz, See Fig. 5
V_GS = 0V, V_DS = 0V to 120V h, See Fig. 11
V_GS = 0V, V_DS = 0V to 120V g
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 104 A MOSFET symbol
D
(Body Diode)
showing the
I_SM
Pulsed Source Current
(Body Diode) d
––– ––– 420
A integral reverse
p-n junction diode.
G
S
V_SD
Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V ^f
t_rr
Reverse Recovery Time
––– 86 ––– ns T_J = 25°C
V_R = 130V,
––– 110 –––
T_J = 125°C
I_F = 62A
Q_rr
Reverse Recovery Charge
––– 300 ––– nC T_J = 25°C
di/dt = 100A/µs f
––– 450 –––
T_J = 125°C
I_RRM
Reverse Recovery Current
––– 6.5 ––– A T_J = 25°C
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.11mH
R_G = 25Ω, I_AS = 62A, V_GS =10V. Part not recommended for use
above this value.
ƒ I_SD ≤ 62A, di/dt ≤ 1040A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
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