IRFB4115PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4115PbF
1000
100 ^{TJ = 175°C}
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
DC
100µsec
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
900
ID
800
TOP 10A
700
22A
BOTTOM 62A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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