IRF840AS_04 Datasheet, PDF (6/10 Pages) International Rectifier – SMPS MOSFET HEXFET® Power MOSFET

IRF840AS/LPbF
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
I_{A S}
0 .0 1Ω
+
-
VD _D
A
Fig 12a. Unclamped Inductive Test Circuit
V _{(B R)DSS}
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
1200
1000
 ^TOP
ID
3.6A
5.1A
BOTTOM 8.0A
800
600
400
200
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
610
600
590
580
570
560
550
540
0.0
1.0
2.0
3.0
4.0
5.0
6.0
IAV , Avalanche Current ( A)
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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