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| IRF840AS_04 Datasheet, PDF (2/10 Pages) International Rectifier – SMPS MOSFET HEXFET® Power MOSFET | |||
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IRF840AS/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.58 âââ V/°C Reference to 25°C, ID = 1mAÂ
âââ âââ 0.85 ⦠VGS = 10V, ID = 4.8A Â
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 25 µA VDS = 500V, VGS = 0V
âââ âââ 250
VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
3.7 âââ âââ S VDS = 50V, ID = 4.8A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ âââ 38
âââ âââ 9.0
âââ âââ 18
âââ 11 âââ
ID = 8.0A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 250V
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 23 âââ ns ID = 8.0A
âââ 26 âââ
RG = 9.1â¦
âââ 19 âââ
âââ 1018 âââ
RD = 31â¦,See Fig. 10 ÂÂ
VGS = 0V
âââ 155 âââ
VDS = 25V
âââ 8.0 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 1490 âââ
âââ 42 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
âââ 56 âââ
VGS = 0V, VDS = 0V to 480V Â
Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
510
8.0
13
Units
mJ
A
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
âââ
Junction-to-Ambient ( PCB Mounted, steady-state)*
âââ
1.0
°C/W
40
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 8.0
A showing the
integral reverse
G
âââ âââ 32
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V Â
âââ 422 633 ns TJ = 25°C, IF = 8.0A
âââ 2.0 3.0 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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