IRF840AS_04 Datasheet, PDF (4/10 Pages) International Rectifier – SMPS MOSFET HEXFET® Power MOSFET

IRF840AS/LPbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 78.04 A}
16
 ^{VDS = 400V}
V_DS = 250V
V_DS = 100V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
 T_J = 150 ^°C
1
 T_J = 25 ^°C
0.1
0.2
 ^VGS ^{= 0 V}
0.5
0.8
1.1
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
 10us
10
 100us
 1ms
1
 10ms
 ^{TC = 25 °C}
T_J = 150 °C
Single Pulse
0.1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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