IRF7NA2907 Datasheet, PDF (6/7 Pages) International Rectifier – HEXFET POWER MOSFET SURFACE MOUNT (SMD-2)

IRF7NA2907
15V
VDS
L
D R IV E R
RG
2V0GVS
tp
D .U .T
I_{A S}
0.01Ω
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
10 V
Q_G
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
6
1000
 ^TOP
ID
33.5A
47.4A
800
BOTTOM 75A
600
400
200
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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