IRF7NA2907 Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET POWER MOSFET SURFACE MOUNT (SMD-2)

1000
^TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
IRF7NA2907
1000
^TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
 20µs PULSE WIDTH
TJ = 25 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
0.1
 20µs PULSE WIDTH
TJ = 150 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
 T_J = 150^° C
100
 T_J = 25^° C
10
4.5
 V DS =1255V
20µs PULSE WIDTH
5.0
5.5
6.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ ID = 75A}
2.0
1.5
1.0
0.5
 ^VGS ^{= 10V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3