IRF7NA2907 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET POWER MOSFET SURFACE MOUNT (SMD-2)

PD - 94337B
HEXFET^® POWER MOSFET
SURFACE MOUNT (SMD-2)
IRF7NA2907
75V, N-CHANNEL
Product Summary
Part Number
IRF7NA2907
BVDSS
75V
RDS(on) ID
0.0045Ω 75A*
Seventh Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-2
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temp.
Weight
75*
75*
300
250
2.0
±20
500
75
25
6.4
-55 to 150
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
1
02/18/02