IRF7807PBF_15 Datasheet, PDF (6/8 Pages) International Rectifier – N Channel Application Specific MOSFETs

IRF7807/APbF
IRF7807
10
IRF7807A
10
T_J = 150°C
1
T_J = 25 °C
T_J = 150 °C
1
T_J = 25°C
0.1
0.4
V_GS = 0 V
0.5
0.6
0.7
0.8
0.9
V_SD,Source-to-Drain Voltage (V)
Figure 11. Typical Source-Drain Diode Forward Voltage
0.1
0.4
V_GS = 0 V
0.5
0.6
0.7
0.8
0.9
V_SD,Source-to-Drain Voltage (V)
Figure 12. Typical Source-Drain Diode Forward Voltage
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
0.1
0.001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t₁
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T _J = P _DM x Z _thJA + T_A
0.01
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
1000
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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