IRF7807PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – N Channel Application Specific MOSFETs

PD – 95290
IRF7807PbF
IRF7807APbF
HEXFET^® Chip-Set for DC-DC Converters
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
Description
These new devices employ advanced HEXFET
Power MOSFET technology to achieve an
unprecedented balance of on-resistance and gate
charge. The reduced conduction and switching losses
make them ideal for high efficiency DC-DC
Converters that power the latest generation of mobile
microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
SO-8
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
Device Features
IRF7807 IRF7807A
Vds
30V
30V
Rds(on) 25mΩ 25mΩ
Qg
17nC 17nC
Qsw
5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
25°C
Current (V_GS ≥ 4.5V)
Pulsed Drain Current
70°C
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
Symbol
V_DS
V_GS
I
D
I_DM
P_D
T_J, T_STG
I
S
I_SM
IRF7807
IRF7807A
30
±12
8.3
8.3
6.6
6.6
66
66
2.5
1.6
–55 to 150
2.5
2.5
66
66
Units
V
A
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
R_θJA
Max.
50
Units
°C/W
www.irf.com
1
09/22/04