IRF7807PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – N Channel Application Specific MOSFETs

IRF7807/APbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
V_(BR)DSS
Static Drain-Source
on Resistance*
R_DS(on)
Gate Threshold Voltage* V (th)
GS
Drain-Source Leakage I_DSS
Current*
IRF7807
Min Typ Max
30 – –
17 25
1.0
30
150
IRF7807A
Min Typ Max Units
30 – – V
17 25 mΩ
1.0
V
30 µA
150
Conditions
V_GS = 0V, I_D = 250µA
V_GS = 4.5V, I_D = 7A‚
V = V , I = 250µA
DS
GS D
V_DS = 24V, V_GS = 0
V_DS = 24V, V_GS = 0,
Tj = 100°C
Gate-Source Leakage I
GSS
Current*
±100
±100 nA V = ±12V
GS
Total Gate Charge*
Q
g
Pre-Vth
Q_gs1
Gate-Source Charge
12 17
2.1
12 17
2.1
V = 5V, I = 7A
GS
D
V_DS = 16V, I_D = 7A
Post-Vth
Q
0.76
gs2
Gate-Source Charge
0.76
nC
Gate to Drain Charge
Switch Charge*
(Q_gs2 + Q_gd)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
gd
Q_SW
Q
oss
R_g
t_d(on)
t
r
t_d (off)
t_f
2.9
3.66 5.2
14 16.8
1.2
12
17
25
6
2.9
3.66
14 16.8
1.2
Ω
12
17
ns
25
6
V = 16V, V = 0
DS
GS
V_DD = 16V
I = 7A
D
R_g = 2Ω
V_GS = 4.5V
Resistive Load
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
Conditions
Diode Forward
V_SD
Voltage*
1.2
1.2 V I_S = 7A‚, V_GS = 0V
Reverse Recovery
Q_rr
80
80
Charge„
Reverse Recovery
Q_rr(s)
50
50
Charge (with Parallel
Schotkky)„
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 300 µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ Typ = measured - Q_oss
* Devices are 100% tested to these parameters.
2
nC di/dt = 700A/µs
V = 16V, V = 0V, I = 7A
DS
GS
S
di/dt = 700A/µs
(with 10BQ040)
V_DS = 16V, V_GS = 0V, I_S = 7A
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