IRF7665S2PBF Datasheet, PDF (6/9 Pages) International Rectifier – Key parameters optimized for Class-D audio amplifier applications

IRF7665S2TR/TR1PbF
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 17a. Gate Charge Test Circuit
D.U.T
+
‚
-

R_G
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 17b. Gate Charge Waveform
+
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
-
Current Transformer
„
-
+
• di/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V_DD
+
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V^*
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
Indu^Icⁿt^do^ur^ctC^oru^Cre^urn^ret ^nt
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
6
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