IRF7665S2PBF Datasheet, PDF (1/9 Pages) International Rectifier – Key parameters optimized for Class-D audio amplifier applications

DIGITAL AUDIO MOSFET
PD - 96239
IRF7665S2TRPbF
IRF7665S2TR1PbF
Features
• Key parameters optimized for Class-D audio amplifier
applications
• Low R_DS(on) for improved efficiency
• Low Q_g for better THD and improved efficiency
• Low Q_rr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink Š
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
· Lead-Free (Qualified up to 260°C Reflow)
· Industrial Qualified
Key Parameters
V_DS
100
V
R_DS(on) typ. @ V_GS = 10V 51
m:
Q_g typ.
8.3 nC
R_G(int) typ.
3.5
SB
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SB
SC
M2
M4
L4
L6
L8
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF7665S2TR/TR1PbF device utilizes DirectFET^TM packaging technology. DirectFET^TM packaging technology offers lower
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET^TM package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFET^TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
P_D @T_C = 25°C
P_D @T_C = 100°C
P_D @T_A = 25°C
T_J
T_STG
Maximum Power Dissipation
j Power Dissipation
j Power Dissipation
jà Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
R_θJA
R_θJ-Can
Parameter
e Junction-to-Ambient
h Junction-to-Ambient
i Junction-to-Ambient
jk Junction-to-Can
R_θJ-PCB
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
100
± 20
14.4
10.2
4.1
58
30
15
2.4
0.2
-55 to + 175
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/02/09