IRF7665S2PBF Datasheet, PDF (2/9 Pages) International Rectifier – Key parameters optimized for Class-D audio amplifier applications

IRF7665S2TR/TR1PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
V_(BR)DSS
Drain-to-Source Breakdown Voltage
100
∆V_(BR)DSS/∆T_J
Breakdown Voltage Temp. Coefficient
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
V_GS(th)
Gate Threshold Voltage
3.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
R_G(int)
Internal Gate Resistance
–––
Typ.
–––
0.10
51
4.0
–––
–––
–––
–––
3.5
Dynamic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ.
gfs
Forward Transconductance
8.8
–––
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
8.3
–––
1.9
–––
0.77
–––
3.2
–––
2.4
–––
4.0
–––
3.8
–––
6.4
–––
7.1
–––
3.6
–––
515
–––
112
–––
30
–––
533
–––
67
–––
115
Avalanche Characteristics
Parameter
E_AS
d Single Pulse Avalanche Energy
I_AR
Ù Avalanche Current
Diode Characteristics
Parameter
Min. Typ.
I_S
Continuous Source Current
(Body Diode)
–––
–––
I_SM
Pulsed Source Current
Ù (Body Diode)
–––
–––
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
–––
–––
–––
33
–––
38
Max.
–––
–––
62
5.0
20
250
100
-100
5.0
Units
V
V/°C
mΩ
V
µA
nA
Ω
Conditions
V_GS = 0V, I_D = 250µA
f ^{Reference to 25°C, ID = 1mA}
V_GS = 10V, I_D = 8.9A
V_DS = V_GS, I_D = 25µA
V_DS = 100V, V_GS = 0V
V_DS = 80V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Max.
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
V_DS = 25V, I_D = 8.9A
V_DS = 50V
V_GS = 10V
I_D = 8.9A
See Fig. 6 and 17
V_DD = 50V
I_D = 8.9A
ns
f ^{RG = 6.8Ω}
V_GS = 10V
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
g ^{VGS = 0V, VDS = 80V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 80V
Typ.
–––
–––
Max.
37
8.9
Units
mJ
A
Max.
14.4
58
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
f T_J = 25°C, I_S = 8.9A, V_GS = 0V
f ^{TJ = 25°C, IF = 8.9A, VDD = 25V}
di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T_J = 25°C, L = 0.944mH, R_G = 25Ω, I_AS = 8.9A.
ƒ Surface mounted on 1 in. square Cu board.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same
charging time as C_oss while V_DS is rising from 0 to 80% V_DSS.
2
† Used double sided cooling , mounting pad.
‡ Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
ˆ T_C measured with thermal couple mounted to top
(Drain) of part.
‰ R_θ is measured at T_J of approximately 90°C.
Š Based on testing done using a typical device & evaluation board
at Vbus=±45V, f_SW=400KHz, and T_A=25°C. The delta case
temperature ∆T_C is 55°C.
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