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IRF7601TR Datasheet, PDF (6/8 Pages) International Rectifier – Generation V Technology | |||
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IRF7601
D.U.T
+
Â
-
Â
RG
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
⢠Low Stray Inductance
Â
⢠Ground Plane
⢠Low Leakage Inductance
Current Transformer
-
Â
-
+
⢠dv/dt controlled by RG
⢠Driver same type as D.U.T.
⢠ISD controlled by Duty Factor "D"
⢠D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ⤠5%
ISD
* VGS = 5V for Logic Level Devices
Fig 12. For N-Channel HEXFETS
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