IRF7601TR Datasheet, PDF (1/8 Pages) International Rectifier – Generation V Technology

l Generation V Technology
l Ultra Low On-Resistance
S
l N-Channel MOSFET
l Very Small SOIC Package
S
l Low Profile (<1.1mm)
S
l Available in Tape & Reel
G
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
I_DM
PD @TA = 25°C
VGS
dv/dt
T_J,T_STG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
PD - 9.1261D
IRF7601
HEXFET^® Power MOSFET
AA
1
8
D
2
7
D
3
6
D
4
5
D
T o p V ie w
V_DSS = 20V
R_DS(on) = 0.035Ω
M ic r o 8
Max.
5.7
4.6
30
1.8
14
± 12
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
70
Units
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97