IRF7601TR Datasheet, PDF (4/8 Pages) International Rectifier – Generation V Technology

IRF7601
1200
V _GS = 0V ,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SHO RTED
1000
C _rss = C _{g d}
C _oss = C _ds + C _gd
C is s
800
C oss
600
400
C rs s
200
0
A
1
10
100
V _{D S} , D rain-to-S ource Voltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
T_J = 1 50 °C
T_J = 25°C
1
0.1
0.4
VG S = 0V _A
0.8
1.2
1.6
2.0
2.4
V _SD , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
I _D = 3.8A
V_{D S} = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE F IGURE 9
0
A
0
4
8
12
16
20
24
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
10 0µ s
10
1m s
T_A = 25°C
T_J = 150°C
S ing le Pulse
1
10 ms
0.1
1
10
V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area