IRF7509 Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=+-30V)

IRF7509
0.60
0.50
0.40
I = -2.0A
P - Channel
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
0.30
1
1ms
0.20
0.10
3
6
9
12
/5 ^-V
, Gate-to-Source Voltage (V)
A
15
Fig 17. Typical On-Resistance Vs. Gate
Voltage
400
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SH O R TE D
C _rss = C _gd
C _oss = C_ds + C _gd
300
C iss
C oss
200
T_C = 25 °C
T_J = 150° C
Single Pulse
0.1
1
10
10ms
100
-V_DS , Drain-to-Source Voltage (V)
Fig 18. Maximum Safe Operating Area
20
I _D = -1.2A
16
V_DS = -24V
V_DS = -15V
12
8
100
Crss
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
N-P - Channel
4
FOR TEST CIRCUIT
SEE FIG URE 9
0
A
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
t1
1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t₁ / t ₂
2. Peak TJ = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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