IRF7509 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=+-30V)

100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
N - Channel
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
IRF7509
1
3.0V
0.1
0.1
20µs PULSE W IDTH
TJ = 25°C
A
1
10
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 25°C
10
TJ = 150°C
1
0.1
3.0
V DS= 10V
20µs PULS E W IDTH
A
3.5
4.0
4.5
5.0
5.5
6.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
ID = 1.7A
1.5
1.0
0.5
0.0
-60
-40 -20 0
VGS = 10V
A
20 40 60 80 100 120 140 160
T_J , Junction Tem perature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
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3.0V
1
0.1
0.1
20µs PULSE W IDTH
TJ = 150°C
A
1
10
V _{D S,} D rain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0.4
VG S = 0V _A
0.8
1.2
1.6
2.0
V_SD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.220
0.180
0.140
VGS = 4.5V
0.100
VGS = 10V
0.060
0
2
4
6
8
10
I _D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
3