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IRF7509 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=+-30V) | |||
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IRF7509
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 â â
P-Ch -30 â â V
N-Ch
P-Ch
â 0.059 â
â -0.039 â
V/°C
N-Ch
P-Ch
â
â
â
â
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
â¦
N-Ch 1.0 â â
P-Ch -1.0 â â V
N-Ch 1.9 â â
P-Ch 0.92 â â
S
N-Ch â â 1.0
P-Ch â
N-Ch â
â
â
-1.0
25
µA
P-Ch â â -25
N-P ââ â ±100
N-Ch ââ 7.8 12
P-Ch â 7.5 11
N-Ch ââ
P-Ch â
1.2
1.3
1.8
1.9
nC
N-Ch ââ 2.5 3.8
P-Ch â 2.5 3.7
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.7A Â
VGS = 4.5V, ID = 0.85A Â
VGS = -10V, ID =-1.2A Â
VGS = -4.5V, ID =-0.6A Â
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 0.85A Â
VDS = -10V, ID = -0.6A
Â
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 1.7A, VDS = 24V, VGS = 10V
Â
P-Channel
ID = -1.2A, VDS = -24V, VGS = -10V
N-Ch â 4.7 â
P-Ch â 9.7 â
N-Channel
N-Ch â
P-Ch â
N-Ch â
10
12
12
â
â
â
ns
VDD = 15V, ID = 1.7A, RG = 6.1â¦,
RD = 8.7â¦
Â
P-Ch â 19 â
N-Ch â 5.3 â
P-Ch â 9.3 â
P-Channel
VDD = -15V, ID = -1.2A, RG = 6.2â¦,
RD = 12â¦
N-Ch â 210 â
N-Channel
P-Ch â 180
N-Ch â 80
â
â
pF
VGS = 0V, VDS = 25V, Æ = 1.0MHz
Â
P-Ch â 87 â
P-Channel
N-Ch â 32 â
P-Ch â 42 â
VGS = 0V, VDS = -25V, Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch â â 1.25
IS
Continuous Source Current (Body Diode)
P-Ch â â -1.25 A
N-Ch â â 21
ISM
Pulsed Source Current (Body Diode) Â
P-Ch â â -16
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch â
P-Ch â
N-Ch â
P-Ch â
N-Ch â
P-Ch â
â 1.2 V
â -1.2
40 60 ns
30 45
48 72 nC
37 55
TJ = 25°C, IS = 1.7A, VGS = 0V Â
TJ = 25°C, IS = -1.8A, VGS = 0V Â
N-Channel
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
Â
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
 Pulse width ⤠300µs; duty cycle ⤠2%.
 N-Channel ISD ⤠1.7A, di/dt ⤠120A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C  Surface mounted on FR-4 board, t ⤠10sec.
P-Channel ISD ⤠-1.2A, di/dt ⤠160A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
2
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