IRF7507PBF_15 Datasheet, PDF (6/8 Pages) International Rectifier – Ultra Low On-Resistance

IRF7507PbF
0.300
0.250
0.200
ID = -1.7A
0.150
0.100
2
3
4
5
6
7
8
-V_GS , Gate-to-Source Voltage (V)
P - Channel
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
500
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
400
C_oss = C_ds + C _gd
Ciss
300
Coss
Fig 18. Maximum Safe Operating Area
10 _{I D = -1.2A}
VDS = -16V
8
6
200
Crss
100
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
N-P - Channel
4
2
FOR TEST CIRCUIT
SEE FIGURE 19
0
A
0
2
4
6
8
10
Q_G , Total Gate Charge (nC)
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
t1
1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
0.1
0.00001
0.0001
0.001
0.01
2. Peak T J = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
www.irf.com