IRF7507PBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – Ultra Low On-Resistance

PD - 95218
IRF7507PbF
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
N-CHANNEL MOSFET
S1
1
8
D1
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
G1
2
S2
3
7
D1
6
D2
l Available in Tape & Reel
l Fast Switching
l Lead-Free
G2
4
5
D2
P-CHANNEL MOSFET
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
N-Ch P-Ch
V_DSS 20V -20V
R_DS(on) 0.135Ω 0.27Ω
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
V_GSM
dv/dt
T_J , T_STG
Drain-Source Voltage
Continuous Drain Current, V_GS
Continuous Drain Current, V_GS
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJA
Maximum Junction-to-Ambient „
www.irf.com
Max.
N-Channel
P-Channel
20
-20
2.4
-1.7
1.9
-1.4
19
-14
1.25
0.8
10
± 12
16
5.0
-5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
Max.
100
Units
°C/W
1
5/11/04