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IRF7507PBF_15 Datasheet, PDF (2/8 Pages) International Rectifier – Ultra Low On-Resistance | |||
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IRF7507PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 â â
P-Ch -20 â â
V
N-Ch â 0.041 â
P-Ch â -0.012 â
V/°C
N-Ch
â
â
0.085 0.14
0.120 0.20
P-Ch
â
â
0.17 0.27
0.28 0.40
â¦
N-Ch 0.7 â â
P-Ch -0.7 â â
V
N-Ch 2.6 â â
P-Ch 1.3 â â
S
N-Ch â â 1.0
P-Ch â
N-Ch â
â
â
-1.0
25
µA
P-Ch â â -25
N-P ââ â ±100
N-Ch ââ 5.3 8.0
P-Ch â 5.4 8.2
N-Ch ââ 0.84 1.3
P-Ch â 0.96 1.4
nC
N-Ch ââ 2.2 3.3
P-Ch â 2.4 3.6
N-Ch â 5.7 â
P-Ch â 9.1 â
N-Ch â 24 â
P-Ch â 35 â
N-Ch â 15 â
ns
P-Ch â 38 â
N-Ch â 16 â
P-Ch â 43 â
N-Ch â 260 â
P-Ch â 240 â
N-Ch â 130 â pF
P-Ch â 130 â
N-Ch â 61 â
P-Ch â 64 â
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 1.7A Â
VGS = 2.7V, ID = 0.85A Â
VGS = -4.5V, ID =-1.2AÂ
VGS = -2.7V, ID =-0.6A Â
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 0.85A Â
VDS = -10V, ID = -0.6AÂ
VDS = 16 V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16 V, VGS = 0V, TJ = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
ID = 1.7A, VDS = 16V, VGS = 4.5V
Â
P-Channel
ID = -1.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.7A, RG = 6.0â¦,
RD = 5.7â¦
Â
P-Channel
VDD = -10V, ID = -1.2A, RG = 6.0â¦,
RD = 8.3â¦
N-Channel
VGS = 0V, VDS = 15V, Æ = 1.0MHz
Â
P-Channel
VGS = 0V, VDS = -15V, Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch â â 1.25
IS
Continuous Source Current (Body Diode)
P-Ch â â -1.25 A
N-Ch â â 19
ISM
Pulsed Source Current (Body Diode) Â
P-Ch â â -14
VSD
Diode Forward Voltage
N-Ch â â 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V Â
P-Ch â â -1.2
TJ = 25°C, IS = -1.2A, VGS = 0V Â
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch â 39 59 ns N-Channel
P-Ch â 52 78
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
N-Ch â 37 56 nC P-Channel
Â
P-Ch â 63 95
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
 Pulse width ⤠300µs; duty cycle ⤠2%.
 N-Channel ISD ⤠1.7A, di/dt ⤠66A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
P-Channel ISD ⤠-1.2A, di/dt ⤠100A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
2
 Surface mounted on FR-4 board, t ⤠10sec.
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