IRF7507 Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=+-20V)

IRF7507
0.300
0.250
0.200
ID = -1.7A
0.150
0.100
2
3
4
5
6
7
8
-V_GS , Gate-to-Source Voltage (V)
P - Channel
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
500
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds S HO RTE D
C _rss = C _gd
400
C oss = C ds + C gd
C iss
300
C oss
Fig 18. Maximum Safe Operating Area
10
I _D = -1.2A
VDS = -16V
8
6
200
C rss
100
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
N-P - Channel
4
2
FOR TEST CIRCUIT
SE E FIGURE 19
0
A
0
2
4
6
8
10
Q _G , Total G ate Charge (nC)
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
t1
1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t₁ / t ₂
2. Peak TJ = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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