IRF7507 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=+-20V)

100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
10
2.0V
BOTTOM 1.5V
N - Channel
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
10
2.0V
BOTTOM 1.5V
IRF7507
1
0.1
0.01
0.1
1.5V
20µs PULSE W IDTH
TJ = 25°C
A
1
10
VD _S , D rain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1
1.5V
0.1
0.01
0.1
20µs PULSE W IDTH
TJ = 150°C
A
1
10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
10
TJ = 150°C
TJ = 25°C
1
0.1
1.5
V_DS = 10V
20µs PULSE W IDTH
A
2.0
2.5
3.0
3.5
4.0
V_GS , G ate-to-Source Voltage (V )
Fig 3. Typical Transfer Characteristics
2.0
ID = 1.7A
1.5
1.0
0.5
0.0
-60
-40 -20 0
V_GS = 4.5V
A
20 40 60 80 100 120 140 160
T_J , Junction Tem perature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
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10
TJ = 150°C
1
T_J = 25°C
0.1
0.4
VG S = 0V _A
0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.8
0.6
0.4
V = 2.5V
GS
0.2
V_GS = 5.0V
0.0
A
0
2
4
6
I_D , D rain Current (A )
Fig 6. Typical On-Resistance Vs. Drain
Current
3