IRF7507 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=+-20V)

IRF7507
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 20 — —
P-Ch -20 — —
V
V_GS = 0V, I_D = 250µA
VGS = 0V, ID = -250µA
N-Ch — 0.041 —
P-Ch — -0.012 —
N-Ch
—
—
0.085 0.14
0.120 0.20
P-Ch
—
—
0.17 0.27
0.28 0.40
N-Ch 0.7 — —
P-Ch -0.7 — —
V/°C
Ω
V
Reference to 25°C, I_D = 1mA
Reference to 25°C, I_D = -1mA
V_GS = 4.5V, I_D = 1.7A ƒ
V_GS = 2.7V, I_D = 0.85A ƒ
V_GS = -4.5V, I_D =-1.2Aƒ
VGS = -2.7V, ID =-0.6A ƒ
V_DS = V_GS, I_D = 250µA
V_DS = V_GS, I_D = -250µA
N-Ch 2.6 — —
P-Ch 1.3 — —
S
V_DS = 10V, I_D = 0.85A ƒ
V_DS = -10V, I_D = -0.6Aƒ
N-Ch — — 1.0
V_DS = 16 V, V_GS = 0V
P-Ch —
N-Ch —
— -1.0
— 25
µA
VDS = -16V, VGS = 0V
V_DS = 16 V, V_GS = 0V, T_J = 125°C
P-Ch — — -25
V_DS = -16V, V_GS = 0V, T_J = 125°C
N-P –– — ±100
V_GS = ± 12V
N-Ch –– 5.3 8.0
P-Ch — 5.4 8.2
N-Channel
N-Ch –– 0.84 1.3
P-Ch — 0.96 1.4
nC
I_D = 1.7A, V_DS = 16V, V_GS = 4.5V
„
N-Ch –– 2.2 3.3
P-Channel
P-Ch — 2.4 3.6
I_D = -1.2A, V_DS = -16V, V_GS = -4.5V
N-Ch — 5.7 —
P-Ch — 9.1 —
N-Ch — 24 —
P-Ch — 35 —
N-Ch — 15 —
P-Ch — 38 —
N-Ch — 16 —
P-Ch — 43 —
N-Channel
V_DD = 10V, I_D = 1.7A, R_G = 6.0Ω,
R_D = 5.7Ω
ns
„
P-Channel
V_DD = -10V, I_D = -1.2A, R_G = 6.0Ω,
R_D = 8.3Ω
N-Ch — 260 —
N-Channel
P-Ch — 240 —
N-Ch — 130 —
pF
V_GS = 0V, V_DS = 15V, ƒ = 1.0MHz
ƒ
P-Ch — 130 —
P-Channel
N-Ch — 61 —
P-Ch — 64 —
V_GS = 0V, V_DS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 1.25
I_S
Continuous Source Current (Body Diode)
P-Ch — — -1.25 _A
N-Ch — — 19
I_SM
Pulsed Source Current (Body Diode) 
P-Ch — — -14
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
— 1.2 _V
— -1.2
39 59 _ns
52 78
37 56 _nC
63 95
T_J = 25°C, I_S = 1.7A, V_GS = 0V ƒ
T_J = 25°C, I_S = -1.2A, V_GS = 0V ƒ
N-Channel
T_J = 25°C, I_F = 1.7A, di/dt = 100A/µs
P-Channel
ƒ
T_J = 25°C, I_F = -1.2A, di/dt = -100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel I_SD ≤ 1.7A, di/dt ≤ 66A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
P-Channel I_SD ≤ -1.2A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
2
„ Surface mounted on FR-4 board, t ≤ 10sec.
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