IRF7491 Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7491
20
19
18
17
16
15
14
13
12
11
10
0
VGS = 10V
10 20 30 40 50 60 70 80
ID , Drain Current (A)
45
40
35
30
25
ID = 9.7A
20
15
10
5
0
6 7 8 9 10 11 12 13 14 15 16
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 13. On-Resistance Vs. Gate Voltage
300
ID
TOP
2.6A
4.7A
240
BOTTOM 5.8A
180
120
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
60
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com