IRF7491 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

Applications
High frequency DC-DC converters
V_DSS
80V
PD - 94537
IRF7491
HEXFET^® Power MOSFET
R_DS(on) max
I_D
16mΩ@V_GS = 10V 9.7A
Benefits
Low Gate to Drain Charge to Reduce
S
1
Switching Losses
Fully Characterized Capacitance Including ^{S 2}
AA
8
D
7
D
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
S
3
G
4
6
D
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 100°C
I_DM
P_D @T_A = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
dv/dt
T_J
T_STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead
R_θJA
Junction-to-Ambient (PCB Mount) *
Max.
80
± 20
9.7
6.1
77
2.5
0.02
4.4
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 8
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1
08/30/02