IRF7491 Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7491
100
VGS
TOP
15V
12V
10V
8.0V
10
7.5V
7.0V
6.5V
BOTTOM 6.0V
1
6.0V
0.1
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
10
6.0V
1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
TJ = 25°C
1.00
0.10
5.0
VDS = 25V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.5 _{ID = 9.7A}
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3