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IRF7488 Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET
IRF7488
0.036
0.034
0.032
0.030
0.028
0.026
0.024
0.022
0
0.05
0.04
VGS= 10V
20
40
60
ID , Drain Current (A)
0.03
ID = 3.8A
0.02
80
4.0
8.0
12.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG
ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 13. On-Resistance Vs. Gate Voltage
240
ID
TOP
1.7A
200
3.0A
BOTTOM 3.8A
160
120
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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