IRF7488 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 94507
IRF7488
Applications
l High frequency DC-DC converters
HEXFET^® Power MOSFET
V_DSS
80V
R_DS(on) max
29mW@V_GS=10V
Q_g
38nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
S
1
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
S
2
App. Note AN1001)
S
3
AA
8
D
7
D
6
D
l Fully Characterized Avalanche Voltage
G
4
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J
T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 9
www.irf.com
Max.
80
± 20
6.3
5.0
50
2.5
1.6
20
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
mW/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
9/23/02