IRF7488 Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7488
100
V_GS
TOP 15V
12V
10
10V
6.0V
5.5V
5.0V
4.5V
1 ^{BOTTOM 4.0V}
0.1
0.01
0.001
0.1
4.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
V_GS
TOP 15V
12V
10V
6.0V
5.5V
10
5.0V
4.5V
BOTTOM 4.0V
1
4.0V
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 150°C
2.5
ID = 6.3A
VGS = 10V
2.0
1.00
0.10
0.01
4.0
TJ = 25°C
VDS = 25V
20µs PULSE WIDTH
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3