IRF7477PBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7477PbF
0.009
0.012
0.008
0.007
0.006
VGS = 4.5V
VGS = 10V
0.010
0.008
ID = 14A
0.005
0
20 40 60 80 100 120
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
0.006
3.0
3.4
3.8
4.2
4.6
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
1200
1000
800
600
TOP
BOTTOM
ID
3.7A
6.6A
8.2A
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
400
200
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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