IRF7477PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7477PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
30
–––
–––
–––
V_GS(th)
Gate Threshold Voltage
1.0
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.029 –––
6.5 8.5
7.7 10
––– 2.5
––– 20
––– 100
––– 200
––– -200
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 1mA
mΩ
V_GS = 10V, I_D = 14A ƒ
V_GS = 4.5V, I_D = 11A ƒ
V V_DS = V_GS, I_D = 250µA
µA ^{VDS = 24V, VGS = 0V}
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 16V}
V_GS = -16V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Q_g
Q_gs
Q_gd
Q_oss
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
35 ––– –––
––– 25 38
––– 6.5 –––
––– 8.2 –––
––– 30 –––
––– 12 –––
––– 9.8 –––
––– 19 –––
––– 5.9 –––
––– 2710 –––
––– 1120 –––
––– 100 –––
S V_DS = 15V, I_D = 11A
I_D = 11A
nC V_DS = 15V
V_GS = 4.5V
V_GS = 0V, V_DS = 15V
V_DD = 15V
ns ^{ID = 11A}
R_G = 1.8Ω
V_GS = 4.5V ƒ
V_GS = 0V
V_DS = 15V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E_AS
I_AR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
500
8.2
Units
mJ
A
Diode Characteristics
Symbol
I_S
I_SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.80
0.65
91
130
90
140
Max.
2.3
110
1.3
–––
140
200
140
210
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = 11A, V_GS = 0V ƒ
T_J = 125°C, I_S = 11A, V_GS = 0V ƒ
T_J = 25°C, I_F = 11A, V_R=15V
di/dt = 100A/µs ƒ
T_J = 125°C, I_F = 11A, V_R=15V
di/dt = 100A/µs ƒ
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