IRF7477PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7477PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 11A
10
V_DS = 24V
V_DS = 15V
8
6
4
2
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150° C
10
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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