IRF7464PBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXET Power MOSFET

IRF7464PbF
0.70
VGS = 10V
0.60
0.70
0.60
ID = 0.72A
0.50
0.0
1.0
2.0
3.0
4.0
5.0
ID , Drain Current (A)
0.50
7
8 9 10 11 12 13 14 15
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 13. On-Resistance Vs. Gate Voltage
200
ID
TOP
0.5A
0.8A
160
BOTTOM 1.2A
120
80
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
40
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com