IRF7464PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXET Power MOSFET

IRF7464PbF
10000
1000
100
10
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 0.72A
16
12
V_DS = 160V
V_DS = 100V
V_DS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8 10 12 14
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
T_J = 150° C
1
T_J = 25° C
0.1
0.4
V_GS = 0 V
0.5 0.6 0.7 0.8 0.9 1.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
10us
100us
1
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
0.1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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