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| IRF7464PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXET Power MOSFET | |||
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IRF7464PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
âââ
âââ
3.0
âââ
âââ
âââ
âââ
âââ
0.23
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.73
5.5
25
250
100
-100
V
V/°C
â¦
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 0.72A Â
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
1.1 âââ âââ
âââ 9.5 14
âââ 2.5 3.8
âââ 4.6 6.9
âââ 11 âââ
âââ 9.5 âââ
âââ 18 âââ
âââ 15 âââ
âââ 280 âââ
âââ 52 âââ
âââ 14 âââ
âââ 330 âââ
âââ 25 âââ
âââ 48 âââ
S VDS = 50V, ID = 0.72A
ID = 0.72A
nC VDS = 160V
VGS = 10V, Â
VDD = 100V
ns ID = 0.72A
RG = 24â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
68
1.2
0.25
Units
mJ
A
mJ
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-AmbientÂ
Typ.
âââ
Max.
50
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
60
130
Max.
2.3
10
1.3
90
200
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 0.72A, VGS = 0V Â
TJ = 25°C, IF = 0.72A
di/dt = 100A/µs Â
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