IRF7307PBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET POWER MOSFET

IRF7307PbF
100
P-Channel
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
T_J = 150°C
T_J = 25°C
1
0.1
VGS = 0V _A
0.3
0.6
0.9
1.2
1.5
-V_SD , Source-to-Drain Voltage (V)
Fig 18. Typical Source-Drain Diode
Forward Voltage
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
T_C, Case Temperature ( °C)
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
-
+VDS
V_GS
-3mA
I_G
I_D
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
10
1ms
T_A = 25 °C
10ms
T_J = 150 °C
Single Pulse
1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 19. Maximum Safe Operating Area
R_D
V_DS
V_GS
R_G
D.U.T.
-
+ _VDD
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 21a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 21b. Switching Time Waveforms
-4.5V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig 22b. Basic Gate Charge Waveform