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IRF7307PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET POWER MOSFET | |||
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IRF7307PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 Â Â
P-Ch -20 Â Â
V
N-Ch
P-Ch
 0.044 Â
 -0.012 Â
V/°C
N-Ch
Â
Â
P-Ch
Â
Â
 0.050
 0.070
 0.090
â¦
 0.140
N-Ch 0.70 Â Â
P-Ch -0.70 Â Â
V
N-Ch 8.30 Â Â
P-Ch 4.00 Â Â
S
N-Ch   1.0
P-Ch Â
N-Ch Â
Â
Â
-1.0
25
µA
P-Ch   -25
N-P   ±100
N-Ch   20
P-Ch   22
N-Ch Â
P-Ch Â
Â
Â
2.2
3.3
nC
N-Ch   8.0
P-Ch   9.0
N-Ch  9.0 Â
P-Ch  8.4 Â
N-Ch  42 Â
P-Ch Â
N-Ch Â
26
32
Â
Â
ns
P-Ch  51 Â
N-Ch  51 Â
P-Ch  33 Â
N-P Â
N-P Â
4.0
6.0
Â
Â
nH
N-Ch  660 Â
P-Ch  610 Â
N-Ch  280 Â
P-Ch  310 Â
pF
N-Ch  140 Â
P-Ch  170 Â
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A Â
VGS = 2.7V, ID = 2.2A Â
VGS = -4.5V, ID = -2.2A Â
VGS = -2.7V, ID = -1.8A Â
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.6A Â
VDS = -15V, ID = -2.2A Â
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
Â
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0â¦,
RD = 3.8â¦
Â
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0â¦,
RD = 4.5â¦
Between lead tip
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, Â = 1.0MHz
Â
P-Channel
VGS = 0V, VDS = -15V, Â = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
Min. Typ. Max. Units
Conditions
N-Ch   2.5
P-Ch   -2.5 A
N-Ch   21
P-Ch   -17
N-Ch Â
P-Ch Â
 1.0 V
 -1.0
TJ = 25°C, IS = 1.8A, VGS = 0V Â
TJ = 25°C, IS = -1.8A, VGS = 0V Â
N-Ch  29 44 ns N-Channel
P-Ch  56 84
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
N-Ch Â
P-Ch Â
22
71
33
110
nC
P-Channel
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
Â
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
 Pulse width ⤠300µs; duty cycle ⤠2%.
 N-Channel ISD ⤠2.6A, di/dt ⤠100A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
P-Channel ISD ⤠-2.2A, di/dt ⤠50A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C
 Surface mounted on FR-4 board, t ⤠10sec.
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