IRF7307PBF Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET POWER MOSFET

100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
P-Channel
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
IRF7307PbF
1
-1.5V
0.1
0.01
20µs PULSE WIDTH
TJ = 25°C
A
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
1
0.1
1.5
V_DS = -15V
20µs PULSE WIDTH
A
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-V_GS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
1500
1000
500
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
Coss
Crss
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
1
-1.5V
0.1
0.01
20µs PULSE WIDTH
TJ = 150°C
A
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 13. Typical Output Characteristics
2.0
ID = -3.6A
1.5
1.0
0.5
0.0
-60
VGS = -4.5V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
10 _{I D = -2.2A}
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 22
0
A
0
5
10
15
20
25
Q_G , Total Gate Charge (nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage