GB25XF120K Datasheet, PDF (6/11 Pages) International Rectifier – IGBT 6PACK MODULE

GB25XF120K
1000
100
100
20 µs
10
100 µs
1
0.1
1
1 ms
10 ms
DC
10
100
1000 10000
VCE (V)
Fig. 13 - Forward SOA
T_C = 25°C; T_J ≤ 150°C
10
1
10
100
1000
VCE (V)
10000
Fig. 14 - Reverse Bias SOA
T_J = 150°C; V_GE =15V
350
300
250
200
150
100
50
0
0
TJ = 25°C
TJ = 125°C
5
10
15
20
VGE (V)
Fig. 15 - Typ. Transfer Characteristics
V_CE = 50V; tp = 10µs
6
50
45
25°C
40
125°C
35
30
25
20
15
10
5
0
0.0
1.0
2.0
3.0
4.0
VF (V)
Fig. 16 - Typ. Diode Forward Characteristics
tp = 80µs
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