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GB25XF120K Datasheet, PDF (1/11 Pages) International Rectifier – IGBT 6PACK MODULE
PD - 94569
GB25XF120K
IGBT 6PACK MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed 
ECONO2 6PACK
VCES = 1200V
IC = 25A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.35V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 80°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 80°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Thermal and Mechanical Characteristics
Parameter
RθJC (IGBT)
Junction-to-Case- IGBT
RθJC (Diode)
Junction-to-Case- Diode
RθCS (Module) Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
www.irf.com
Max.
1200
40
25
80
80
40
25
80
±20
198
111
150
-40 to +125
AC 2500 (1min)
Units
V
A
V
W
°C
V
Min.
–––
–––
–––
2.7
–––
Typ.
–––
–––
0.05
–––
170
Max.
0.63
1.00
–––
3.3
–––
Units
°C/W
N.m
g
1
10/18/02